The 2N, 2N, 2N and 2N are sili- con planar TO (for 2N and 2N) and in Jedec . This datasheet has been download from. Semelab encourages customers to verify that datasheets are current before Test Conditions. Min. Typ. Max. Unit. LAB. SEME. 2N IC = 10mA. IB = 0. Sep 2. Philips Semiconductors. Product specification. NPN switching transistors. 2N; 2NA. FEATURES. • High current (max.
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Current Drains out through emitter, normally connected to ground. Current flows in through collector, normally connected to load. Complete Technical Details can be found at the datasheet given at the end of n22219 page.
The maximum amount of current that could flow through the Collector pin is mA, hence we cannot connect loads that consume more than mA using this transistor. To bias a transistor we have to supply current to base pin, this current I B should be limited to 5mA by using a transistor to the base pin.
When this transistor is fully biased then it can allow a maximum of mA to flow across the collector and emitter. This stage is called Saturation Region. When base current is removed the transistor fatasheet fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around mV.
But it comes in a metal can package and can operate dattasheet voltages slightly higher than what a 2N can handle.
Overall it is just another small signal transistor which is commonly used in switching and amplifying circuits. So if you looking for an NPN transistor that could switch loads or for decent amplification then 2N might the right choice for your project.
The 2N is a NPN transistor and is normally used as a switch in many circuits. Since transistor is of NPN the load to be switched should be connected to the collector and the emitter should be connected to the ground as show in the figure below. Another important thing to keep in mind, while using a transistor as switch is the base resistor. This resistor is connected to the base pin of the transistor to limit the current flowing through the base.
2N2219 Datasheet, Equivalent, Cross Reference Search
As we know the transistor is a current controlled device meaning, we have pass some current I B thorough the base of the transistor to turn it on. The value of this current can be calculated by the required amount of current that will be consumed by the load. Here lets us assume the load here consumes around mA maximum so our collector current I C mA.
To make this current flow through the transistor the value of base current I B can be calculated using the below formula:. Where h FE, is the current gain of the transistor which in our case is In our case for a collector current of mA we have to pass 2n229 base current of 16mA. So to calculate the resistor value of the base we can use the formulae.
Where Vcc is the voltage on which the load operates and V BE is the voltage across the Base and Emitter datashfet in our case according to the data sheet 1.
2N Datasheet(PDF) – NXP Semiconductors
So the value if R B will be. However this vale will not be very accurate because the transistor will have an internal voltage drop across the collector current, so it mostly experimental to get the maximum current from the transistor.
But this calculation will lead to the closest value to start with. Submitted by admin on 21 June To make this current flow through the transistor the value of base current I B can be calculated using the below formula: Amplifier modules like Audio amplifiers, signal Amplifier etc. TL — Programmable Reference Voltage.