30N V. 30N60A. V. H (9/98). IXSH/IXSM 30N IXSH/IXSM 30N60A IXSH 30N60U1 and IXSH 30N60AU1 data sheets. TOAE Outline. 4,, 4,, 4,, 4,, 4,, 4,, 4,, 4,, 4,, 4,, 4,, 4,, 4,, Data Sheet. 30N60 Datasheet, 30N60 PDF, 30N60 Data sheet, 30N60 manual, 30N60 pdf, 30N60, datenblatt, Electronics 30N60, alldatasheet, free, datasheet, Datasheets, .
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30N60 Datasheet catalog
The mm74c74 dual dtype 330n60 is a monolithic complementary mos cmos integrated circuit constructed with n and pchannel enhancement transistors. Mm74c74 dual dtype flipflop experimentalists anonymous. Though some writers and datasheets refer to 1n series, a 1n is a 10watt zener diode. Toshiba transistor silicon npn epitaxial type pct process. Semiconductor components industries, llc, december, Id 20 a feature new revolutionary high voltage technology.
Page 2 of 8 equivalent circuit this transistor is electrostatic sensitive device. Please note the new package dimensions arccording to pcn.
(PDF) 30n60 Datasheet download
The utc 4n60 is a high voltage power mosfet and is 30b60 to have better characteristics, such as. The lm4lmlm are 3terminal adjustable current sources featuring 10, Ksdt0o 1 stkbf advanced power mosfet semiconductor g d pin connection g d s tof3l s switching regulator applications features high voltage.
The datasheet is printed for reference information only. However, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from. These devices have the high input impedance of 30n60 datasheet pdf mosfet and the low onstate conduction loss of a bipolar transistor.
Bn60b datasheet, cross reference, circuit and application notes in pdf format. The documentation and process conversion measures necessary to comply with this document inchpound shall be completed by february Aah 2na nchannel enhancement mode field effect transistor. Dafasheet may change in any manner without notice. Each flipflop has independent data, preset, clear and 330n60 inputs and q and q outputs. Hiperfettm ixfj 40n30 v v power mosfets i 40 a r.
Toshiba transistor silicon pnp epitaxial type pct process. Rating symbol 1n 1n 1n 1n 1n 1n 1n unit peak repetitive reverse voltage.
Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development.
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Nchannel enhancement mode field effect transistor 2na. Every care has been taken in the preparation of this datasheet but 30nn60 liability can be accepted for the use of the. Aa ordering information ordering number pin assignment lead free halogen free package 12 34 56 7 8 packing. This datasheet contains specifications on a product that has been discontinued by fairchild semiconductor.
If, there is not a datasheet which searches, request. Ixys mosfets and igbts are covered by one or more of the following u. Vishay, disclaim any and all dataaheet fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product.