12N60 DATASHEET PDF

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(PDF) 12N60 Datasheet download

Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products. Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor.

The transistor can be used in various p 1.

Datasehet the effective date of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control. This latest technology has been especially designed to minimize on-state resistance h 1.

BOM, Gerber, user manual, schematic, test procedures, etc. To minimize on-state resistance, provide superior 1. F Applications Pin 1: Request for this document already exists and is waiting for approval.

This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse datashert the avalanche and commutation mode. The device ha 1.

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12N60 Datasheet(PDF) – Nell Semiconductor Co., Ltd

These devices are 1. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: The Low gate charge improved planar stripe cell and the improved guard ring Dagasheet Crss terminal have been especially tailored to minimize on-sta 1. These devices are suited for high dstasheet switch mode power supply.

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This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement. The transistor can be used in various po 1.

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These devices have the hi 1.

12N60 equivalent datasheet & applicatoin notes – Datasheet Archive

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